TPN1R603PL,L1Q
Part Number:
TPN1R603PL,L1Q
Manufacturer:
Toshiba Semiconductor
Description:
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17497 Pieces
Data sheet:
TPN1R603PL,L1Q.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:10V @ 10µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSIX-H
Rds On (Max) @ Id, Vgs:1.2 mOhm @ 80A, 10V
Power Dissipation (Max):104W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPN1R603PL,L1Q(M
TPN1R603PLL1Q
TPN1R603PLL1QTR
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:TPN1R603PL,L1Q
Input Capacitance (Ciss) (Max) @ Vds:3900pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30V
Description:X35 PB-F POWER MOSFET TRANSISTOR
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Email:[email protected]

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