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TPH1110ENH,L1Q
- Part Number:
- TPH1110ENH,L1Q
- Manufacturer:
- Toshiba Semiconductor
- Description:
- MOSFET N-CH 200V 7.2A 8SOP
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15919 Pieces
- Data sheet:
- TPH1110ENH,L1Q.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-SOP Advance (5x5) |
| Series: | U-MOSVIII-H |
| Rds On (Max) @ Id, Vgs: | 114 mOhm @ 3.6A, 10V |
| Power Dissipation (Max): | 1.6W (Ta), 42W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | TPH1110ENH,L1Q(M TPH1110ENHL1QTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | TPH1110ENH,L1Q |
| Input Capacitance (Ciss) (Max) @ Vds: | 600pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 7.2A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5) |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | MOSFET N-CH 200V 7.2A 8SOP |
| Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta) |
| Email: | [email protected] |
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