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TK6Q60W,S1VQ
- Part Number:
- TK6Q60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor
- Description:
- MOSFET N CH 600V 6.2A IPAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15937 Pieces
- Data sheet:
- TK6Q60W,S1VQ.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.7V @ 310µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | I-Pak |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 820 mOhm @ 3.1A, 10V |
| Power Dissipation (Max): | 60W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-251-3 Stub Leads, IPak |
| Other Names: | TK6Q60W,S1VQ(S TK6Q60WS1VQ |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | TK6Q60W,S1VQ |
| Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Expanded Description: | N-Channel 600V 6.2A (Ta) 60W (Tc) Through Hole I-Pak |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | MOSFET N CH 600V 6.2A IPAK |
| Current - Continuous Drain (Id) @ 25°C: | 6.2A (Ta) |
| Email: | [email protected] |
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