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TK6A80E,S4X
- Part Number:
- TK6A80E,S4X
- Manufacturer:
- Toshiba Semiconductor
- Description:
- MOSFET N-CH 800V TO220SIS
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 19282 Pieces
- Data sheet:
- TK6A80E,S4X.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 600µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220SIS |
| Series: | π-MOSVIII |
| Rds On (Max) @ Id, Vgs: | 1.7 Ohm @ 3A, 10V |
| Power Dissipation (Max): | 45W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 Full Pack, Isolated Tab |
| Other Names: | TK6A80E,S4X(S TK6A80ES4X |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | TK6A80E,S4X |
| Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Description: | MOSFET N-CH 800V TO220SIS |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Email: | [email protected] |
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