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TK39J60W5,S1VQ
- Part Number:
- TK39J60W5,S1VQ
- Manufacturer:
- Toshiba Semiconductor
- Description:
- MOSFET N CH 600V 38.8A TO-3P(N)
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14814 Pieces
- Data sheet:
- TK39J60W5,S1VQ.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.7V @ 1.9mA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-3P(N) |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 19.4A, 10V |
| Power Dissipation (Max): | 270W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-3P-3, SC-65-3 |
| Other Names: | TK39J60W5,S1VQ(O TK39J60W5S1VQ |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | TK39J60W5,S1VQ |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Expanded Description: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole TO-3P(N) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | MOSFET N CH 600V 38.8A TO-3P(N) |
| Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
| Email: | [email protected] |
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