TK12E60W,S1VX
TK12E60W,S1VX
Part Number:
TK12E60W,S1VX
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N CH 600V 11.5A TO-220
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13107 Pieces
Data sheet:
TK12E60W,S1VX.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.7V @ 600µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:300 mOhm @ 5.8A, 10V
Power Dissipation (Max):110W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Other Names:TK12E60W,S1VX(S
TK12E60WS1VX
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:TK12E60W,S1VX
Input Capacitance (Ciss) (Max) @ Vds:890pF @ 300V
Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V
FET Type:N-Channel
FET Feature:Super Junction
Expanded Description:N-Channel 600V 11.5A (Ta) 110W (Tc) Through Hole TO-220
Drain to Source Voltage (Vdss):600V
Description:MOSFET N CH 600V 11.5A TO-220
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Email:[email protected]

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