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TK12A60U(Q,M)
- Part Number:
- TK12A60U(Q,M)
- Manufacturer:
- Toshiba Semiconductor
- Description:
- MOSFET N-CH 600V 12A TO220SIS
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 19676 Pieces
- Data sheet:
- 1.TK12A60U(Q,M).pdf2.TK12A60U(Q,M).pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220SIS |
| Series: | DTMOSII |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 6A, 10V |
| Power Dissipation (Max): | 35W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 Full Pack |
| Other Names: | TK12A60U(Q) TK12A60U(Q)-ND TK12A60U(QM) TK12A60UQ-ND TK12A60UQM |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | TK12A60U(Q,M) |
| Input Capacitance (Ciss) (Max) @ Vds: | 720pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 600V 12A (Ta) 35W (Tc) Through Hole TO-220SIS |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 600V |
| Description: | MOSFET N-CH 600V 12A TO220SIS |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Email: | [email protected] |
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