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TH58BYG2S3HBAI6
- Part Number:
- TH58BYG2S3HBAI6
- Manufacturer:
- Toshiba Semiconductor
- Description:
- IC EEPROM 4GBIT 25NS 67FBGA
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14102 Pieces
- Data sheet:
- TH58BYG2S3HBAI6.pdf
Introduction
Specifications
| Voltage - Supply: | 1.7 V ~ 1.95 V |
|---|---|
| Supplier Device Package: | 67-VFBGA (6.5x8) |
| Speed: | 25ns |
| Series: | Benand™ |
| Packaging: | Tray |
| Package / Case: | 67-VFBGA |
| Other Names: | TH58BYG2S3HBAI6JDH TH58BYG2S3HBAI6YCL |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Moisture Sensitivity Level (MSL): | 3 (168 Hours) |
| Memory Type: | Non-Volatile |
| Memory Size: | 4Gb (512M x 8) |
| Memory Format: | EEPROM |
| Manufacturer Part Number: | TH58BYG2S3HBAI6 |
| Interface: | Parallel |
| Description: | IC EEPROM 4GBIT 25NS 67FBGA |
| Email: | [email protected] |
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