STB11NM60-1
STB11NM60-1
Part Number:
STB11NM60-1
Manufacturer:
ST
Description:
MOSFET N-CH 650V 11A I2PAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12886 Pieces
Data sheet:
STB11NM60-1.pdf

Introduction

BYCHIPS is the stocking distributor for STB11NM60-1, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for STB11NM60-1 by email, we will give you a best price according your plan.
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Specifications

Vgs(th) (Max) @ Id:5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK
Series:MDmesh™
Rds On (Max) @ Id, Vgs:450 mOhm @ 5.5A, 10V
Power Dissipation (Max):160W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names:497-5379-5
STB11NM60-1-ND
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:STB11NM60-1
Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 650V 11A (Tc) 160W (Tc) Through Hole I2PAK
Drain to Source Voltage (Vdss):650V
Description:MOSFET N-CH 650V 11A I2PAK
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Email:[email protected]

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