SQM120N10-3M8_GE3
Part Number:
SQM120N10-3M8_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 100V 120A TO263
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
16224 Pieces
Data sheet:
SQM120N10-3M8_GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263 (D²Pak)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:3.8 mOhm @ 20A, 10V
Power Dissipation (Max):375W (Tc)
Packaging:Tube
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature:-55°C ~ 175°C (TA)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:SQM120N10-3M8_GE3
Input Capacitance (Ciss) (Max) @ Vds:7230pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:190nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak)
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100V
Description:MOSFET N-CH 100V 120A TO263
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Email:[email protected]

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