SQD19P06-60L_GE3
SQD19P06-60L_GE3
Part Number:
SQD19P06-60L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 60V 20A TO252
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
14970 Pieces
Data sheet:
SQD19P06-60L_GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252, (D-Pak)
Series:Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs:55 mOhm @ 19A, 10V
Power Dissipation (Max):46W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:SQD19P06-60L-GE3
SQD19P06-60L-GE3-ND
SQD19P06-60L_GE3-ND
SQD19P06-60L_GE3TR
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:SQD19P06-60L_GE3
Input Capacitance (Ciss) (Max) @ Vds:1490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Description:MOSFET P-CH 60V 20A TO252
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Email:[email protected]

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