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SIR616DP-T1-GE3
- Part Number:
- SIR616DP-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N-CH 200V 20.2A SO8
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18276 Pieces
- Data sheet:
- SIR616DP-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PowerPAK® SO-8 |
| Series: | ThunderFET® |
| Rds On (Max) @ Id, Vgs: | 50.5 mOhm @ 10A, 10V |
| Power Dissipation (Max): | 52W (Tc) |
| Packaging: | Original-Reel® |
| Package / Case: | PowerPAK® SO-8 |
| Other Names: | SIR616DP-T1-GE3DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | SIR616DP-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 7.5V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8 |
| Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
| Drain to Source Voltage (Vdss): | 200V |
| Description: | MOSFET N-CH 200V 20.2A SO8 |
| Current - Continuous Drain (Id) @ 25°C: | 20.2A (Tc) |
| Email: | [email protected] |
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