SIR401DP-T1-GE3
SIR401DP-T1-GE3
Part Number:
SIR401DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 20V 50A PPAK SO-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17517 Pieces
Data sheet:
SIR401DP-T1-GE3.pdf

Introduction

BYCHIPS is the stocking distributor for SIR401DP-T1-GE3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SIR401DP-T1-GE3 by email, we will give you a best price according your plan.
Buy SIR401DP-T1-GE3 with BYCHPS
Buy with guarantee

Specifications

Vgs(th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PowerPAK® SO-8
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:3.2 mOhm @ 15A, 10V
Power Dissipation (Max):5W (Ta), 39W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:PowerPAK® SO-8
Other Names:SIR401DP-T1-GE3-ND
SIR401DP-T1-GE3TR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SIR401DP-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:9080pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:310nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 20V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8
Drain to Source Voltage (Vdss):20V
Description:MOSFET P-CH 20V 50A PPAK SO-8
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments