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SI8481DB-T1-E1
- Part Number:
- SI8481DB-T1-E1
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET P-CH 20V 9.7A 4-MICROFOOT
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15927 Pieces
- Data sheet:
- SI8481DB-T1-E1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 900mV @ 250µA |
|---|---|
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 4-MICRO FOOT® (1.6x1.6) |
| Series: | TrenchFET® Gen III |
| Rds On (Max) @ Id, Vgs: | 21 mOhm @ 3A, 4.5V |
| Power Dissipation (Max): | 2.8W (Tc) |
| Packaging: | Original-Reel® |
| Package / Case: | 4-UFBGA |
| Other Names: | SI8481DB-T1-E1DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | SI8481DB-T1-E1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6) |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET P-CH 20V 9.7A 4-MICROFOOT |
| Current - Continuous Drain (Id) @ 25°C: | 9.7A (Tc) |
| Email: | [email protected] |
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