SI5855CDC-T1-E3
SI5855CDC-T1-E3
Part Number:
SI5855CDC-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 20V 3.7A 1206-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13466 Pieces
Data sheet:
SI5855CDC-T1-E3.pdf

Introduction

BYCHIPS is the stocking distributor for SI5855CDC-T1-E3, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for SI5855CDC-T1-E3 by email, we will give you a best price according your plan.
Buy SI5855CDC-T1-E3 with BYCHPS
Buy with guarantee

Specifications

Vgs(th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:1206-8 ChipFET™
Series:LITTLE FOOT®
Rds On (Max) @ Id, Vgs:144 mOhm @ 2.5A, 4.5V
Power Dissipation (Max):1.3W (Ta), 2.8W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-SMD, Flat Lead
Other Names:SI5855CDC-T1-E3-ND
SI5855CDC-T1-E3TR
SI5855CDCT1E3
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:24 Weeks
Manufacturer Part Number:SI5855CDC-T1-E3
Input Capacitance (Ciss) (Max) @ Vds:276pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.8nC @ 5V
FET Type:P-Channel
FET Feature:Schottky Diode (Isolated)
Expanded Description:P-Channel 20V 3.7A (Tc) 1.3W (Ta), 2.8W (Tc) Surface Mount 1206-8 ChipFET™
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Drain to Source Voltage (Vdss):20V
Description:MOSFET P-CH 20V 3.7A 1206-8
Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments