SI5499DC-T1-GE3
SI5499DC-T1-GE3
Part Number:
SI5499DC-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 8V 6A 1206-8
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18900 Pieces
Data sheet:
SI5499DC-T1-GE3.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:800mV @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:1206-8 ChipFET™
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:36 mOhm @ 5.1A, 4.5V
Power Dissipation (Max):2.5W (Ta), 6.2W (Tc)
Packaging:Original-Reel®
Package / Case:8-SMD, Flat Lead
Other Names:SI5499DC-T1-GE3DKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:SI5499DC-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds:1290pF @ 4V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 8V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 8V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™
Drain to Source Voltage (Vdss):8V
Description:MOSFET P-CH 8V 6A 1206-8
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Email:[email protected]

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