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SI3585DV-T1-GE3
- Part Number:
- SI3585DV-T1-GE3
- Manufacturer:
- Vishay / Siliconix
- Description:
- MOSFET N/P-CH 20V 2A 6-TSOP
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15644 Pieces
- Data sheet:
- SI3585DV-T1-GE3.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 600mV @ 250µA (Min) |
|---|---|
| Supplier Device Package: | 6-TSOP |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 2.4A, 4.5V |
| Power - Max: | 830mW |
| Packaging: | Cut Tape (CT) |
| Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
| Other Names: | SI3585DV-T1-GE3CT |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | SI3585DV-T1-GE3 |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| Gate Charge (Qg) (Max) @ Vgs: | 3.2nC @ 4.5V |
| FET Type: | N and P-Channel |
| FET Feature: | Logic Level Gate |
| Expanded Description: | Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET N/P-CH 20V 2A 6-TSOP |
| Current - Continuous Drain (Id) @ 25°C: | 2A, 1.5A |
| Email: | [email protected] |
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