SCT50N120
SCT50N120
Part Number:
SCT50N120
Manufacturer:
ST
Description:
MOSFET N-CH 1.2KV TO247-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13850 Pieces
Data sheet:
1.SCT50N120.pdf2.SCT50N120.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:3V @ 1mA
Vgs (Max):+25V, -10V
Technology:SiCFET (Silicon Carbide)
Supplier Device Package:HiP247™
Series:-
Rds On (Max) @ Id, Vgs:69 mOhm @ 40A, 20V
Power Dissipation (Max):318W (Tc)
Packaging:Tube
Package / Case:TO-247-3
Other Names:497-16598-5
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:SCT50N120
Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:122nC @ 20V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 1200V (1.2kV) 65A (Tc) 318W (Tc) Through Hole HiP247™
Drive Voltage (Max Rds On, Min Rds On):20V
Drain to Source Voltage (Vdss):1200V (1.2kV)
Description:MOSFET N-CH 1.2KV TO247-3
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Email:[email protected]

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