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RYC002N05T316
- Part Number:
- RYC002N05T316
- Manufacturer:
- LAPIS Semiconductor
- Description:
- 0.9V DRIVE NCH SILICON MOSFET
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17988 Pieces
- Data sheet:
- RYC002N05T316.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 800mV @ 1mA |
|---|---|
| Vgs (Max): | ±8V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | SOT-23 |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 200mA, 4.5V |
| Power Dissipation (Max): | 350mW (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | RYC002N05T316TR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | RYC002N05T316 |
| Input Capacitance (Ciss) (Max) @ Vds: | 26pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 50V 200mA (Tc) 350mW (Tc) Surface Mount SOT-23 |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V |
| Drain to Source Voltage (Vdss): | 50V |
| Description: | 0.9V DRIVE NCH SILICON MOSFET |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Tc) |
| Email: | [email protected] |
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