RW1E015RPT2R
RW1E015RPT2R
Part Number:
RW1E015RPT2R
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET P-CH 30V 1.5A WEMT6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17187 Pieces
Data sheet:
RW1E015RPT2R.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-WEMT
Series:-
Rds On (Max) @ Id, Vgs:160 mOhm @ 1.5A, 10V
Power Dissipation (Max):400mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:RW1E015RPT2RTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Manufacturer Part Number:RW1E015RPT2R
Input Capacitance (Ciss) (Max) @ Vds:230pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 30V 1.5A (Ta) 400mW (Ta) Surface Mount 6-WEMT
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Drain to Source Voltage (Vdss):30V
Description:MOSFET P-CH 30V 1.5A WEMT6
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
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