RW1A030APT2CR
RW1A030APT2CR
Part Number:
RW1A030APT2CR
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET P-CH 12V 3A WEMT6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18793 Pieces
Data sheet:
1.RW1A030APT2CR.pdf2.RW1A030APT2CR.pdf3.RW1A030APT2CR.pdf4.RW1A030APT2CR.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1V @ 1mA
Vgs (Max):-8V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-WEMT
Series:-
Rds On (Max) @ Id, Vgs:42 mOhm @ 3A, 4.5V
Power Dissipation (Max):700mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:RW1A030APT2CR-ND
RW1A030APT2CRTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:10 Weeks
Manufacturer Part Number:RW1A030APT2CR
Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 12V 3A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Drain to Source Voltage (Vdss):12V
Description:MOSFET P-CH 12V 3A WEMT6
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Email:[email protected]

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