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RQ3E120BNTB
- Part Number:
- RQ3E120BNTB
- Manufacturer:
- LAPIS Semiconductor
- Description:
- MOSFET N-CH 30V 12A HSMT8
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 19317 Pieces
- Data sheet:
- RQ3E120BNTB.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 8-HSMT (3.2x3) |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 9.3 mOhm @ 12A, 10V |
| Power Dissipation (Max): | 2W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-PowerVDFN |
| Other Names: | RQ3E120BNTBTR |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | RQ3E120BNTB |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 30V 12A (Ta) 2W (Ta) Surface Mount 8-HSMT (3.2x3) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 30V |
| Description: | MOSFET N-CH 30V 12A HSMT8 |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Email: | [email protected] |
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