R6011KNJTL
Part Number:
R6011KNJTL
Manufacturer:
LAPIS Semiconductor
Description:
MOSFET N-CH 600V 11A TO263-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19966 Pieces
Data sheet:
R6011KNJTL.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:5V @ 1mA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263
Series:-
Rds On (Max) @ Id, Vgs:390 mOhm @ 3.8A, 10V
Power Dissipation (Max):124W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:R6011KNJTLTR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:17 Weeks
Manufacturer Part Number:R6011KNJTL
Input Capacitance (Ciss) (Max) @ Vds:740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:22nC @ 10V
FET Type:N-Channel
FET Feature:Schottky Diode (Isolated)
Expanded Description:N-Channel 600V 11A (Tc) 124W (Tc) Surface Mount TO-263
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Description:MOSFET N-CH 600V 11A TO263-3
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Email:[email protected]

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