NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
Part Number:
NVD5117PLT4G-VF01
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET P-CH 60V 61A DPAK
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
18400 Pieces
Data sheet:
NVD5117PLT4G-VF01.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK-3
Series:-
Rds On (Max) @ Id, Vgs:16 mOhm @ 29A, 10V
Power Dissipation (Max):4.1W (Ta), 118W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names:NVD5117PLT4G
NVD5117PLT4G-VF01TR
NVD5117PLT4GOSTR
NVD5117PLT4GOSTR-ND
NVD6828NLT4G-VF01
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:19 Weeks
Manufacturer Part Number:NVD5117PLT4G-VF01
Input Capacitance (Ciss) (Max) @ Vds:4800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:85nC @ 10V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 60V 11A (Ta), 61A (Tc) 4.1W (Ta), 118W (Tc) Surface Mount DPAK-3
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60V
Description:MOSFET P-CH 60V 61A DPAK
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 61A (Tc)
Email:[email protected]

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