NTMS4P01R2
Part Number:
NTMS4P01R2
Manufacturer:
AMI Semiconductor / ON Semiconductor
Description:
MOSFET P-CH 12V 3.4A 8-SOIC
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
13721 Pieces
Data sheet:
NTMS4P01R2.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1.15V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-SOIC
Series:-
Rds On (Max) @ Id, Vgs:45 mOhm @ 4.5A, 4.5V
Power Dissipation (Max):790mW (Ta)
Packaging:Tape & Reel (TR)
Package / Case:8-SOIC (0.154", 3.90mm Width)
Other Names:NTMS4P01R2OS
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:NTMS4P01R2
Input Capacitance (Ciss) (Max) @ Vds:1850pF @ 9.6V
Gate Charge (Qg) (Max) @ Vgs:35nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 12V 3.4A (Ta) 790mW (Ta) Surface Mount 8-SOIC
Drain to Source Voltage (Vdss):12V
Description:MOSFET P-CH 12V 3.4A 8-SOIC
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta)
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