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NTMD6601NR2G
- Part Number:
- NTMD6601NR2G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- MOSFET 2N-CH 80V 1.1A 8SOIC
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 17083 Pieces
- Data sheet:
- NTMD6601NR2G.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Supplier Device Package: | 8-SOIC |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 215 mOhm @ 2.2A, 10V |
| Power - Max: | 600mW |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | NTMD6601NR2G |
| Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Expanded Description: | Mosfet Array 2 N-Channel (Dual) 80V 1.1A 600mW Surface Mount 8-SOIC |
| Drain to Source Voltage (Vdss): | 80V |
| Description: | MOSFET 2N-CH 80V 1.1A 8SOIC |
| Current - Continuous Drain (Id) @ 25°C: | 1.1A |
| Email: | [email protected] |
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