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MJE800G
- Part Number:
- MJE800G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS NPN DARL 60V 4A TO225AA
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 19723 Pieces
- Data sheet:
- MJE800G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 60V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 30mA, 1.5A |
| Transistor Type: | NPN - Darlington |
| Supplier Device Package: | TO-225AA |
| Series: | - |
| Power - Max: | 40W |
| Packaging: | Bulk |
| Package / Case: | TO-225AA, TO-126-3 |
| Other Names: | MJE800GOS |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 2 Weeks |
| Manufacturer Part Number: | MJE800G |
| Frequency - Transition: | - |
| Expanded Description: | Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA |
| Description: | TRANS NPN DARL 60V 4A TO225AA |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 750 @ 1.5A, 3V |
| Current - Collector Cutoff (Max): | 100µA |
| Current - Collector (Ic) (Max): | 4A |
| Email: | [email protected] |
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