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MJ11012G
- Part Number:
- MJ11012G
- Manufacturer:
- AMI Semiconductor / ON Semiconductor
- Description:
- TRANS NPN DARL 60V 30A TO-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 18161 Pieces
- Data sheet:
- MJ11012G.pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 60V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 4V @ 300mA, 30A |
| Transistor Type: | NPN - Darlington |
| Supplier Device Package: | TO-3 |
| Series: | - |
| Power - Max: | 200W |
| Packaging: | Tray |
| Package / Case: | TO-204AA, TO-3 |
| Other Names: | MJ11012G-ND MJ11012GOS |
| Operating Temperature: | -55°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 2 Weeks |
| Manufacturer Part Number: | MJ11012G |
| Frequency - Transition: | 4MHz |
| Expanded Description: | Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-3 |
| Description: | TRANS NPN DARL 60V 30A TO-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 20A, 5V |
| Current - Collector Cutoff (Max): | 1mA |
| Current - Collector (Ic) (Max): | 30A |
| Email: | [email protected] |
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