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IPB65R660CFDAATMA1
- Part Number:
- IPB65R660CFDAATMA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH TO263-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16819 Pieces
- Data sheet:
- IPB65R660CFDAATMA1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 4.5V @ 200µA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO263 |
| Series: | Automotive, AEC-Q101, CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 660 mOhm @ 3.2A, 10V |
| Power Dissipation (Max): | 62.5W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | SP000875794 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 16 Weeks |
| Manufacturer Part Number: | IPB65R660CFDAATMA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 543pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263 |
| Drain to Source Voltage (Vdss): | 650V |
| Description: | MOSFET N-CH TO263-3 |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
| Email: | [email protected] |
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