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IPAN65R650CEXKSA1
- Part Number:
- IPAN65R650CEXKSA1
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET NCH 650V 10.1A TO220-3
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16084 Pieces
- Data sheet:
- IPAN65R650CEXKSA1.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 210µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-TO220 Full Pack |
| Series: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 28W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 Full Pack |
| Other Names: | SP001508828 |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 12 Weeks |
| Manufacturer Part Number: | IPAN65R650CEXKSA1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | Super Junction |
| Expanded Description: | N-Channel 650V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 650V |
| Description: | MOSFET NCH 650V 10.1A TO220-3 |
| Current - Continuous Drain (Id) @ 25°C: | 10.1A (Tc) |
| Email: | [email protected] |
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