HN1B04FE-GR,LF
HN1B04FE-GR,LF
Part Number:
HN1B04FE-GR,LF
Manufacturer:
Toshiba Semiconductor
Description:
TRANS NPN/PNP 50V 0.15A ES6
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12348 Pieces
Data sheet:
HN1B04FE-GR,LF.pdf

Introduction

BYCHIPS is the stocking distributor for HN1B04FE-GR,LF, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for HN1B04FE-GR,LF by email, we will give you a best price according your plan.
Buy HN1B04FE-GR,LF with BYCHPS
Buy with guarantee

Specifications

Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Transistor Type:NPN, PNP
Supplier Device Package:ES6
Series:-
Power - Max:100mW
Packaging:Tape & Reel (TR)
Package / Case:SOT-563, SOT-666
Other Names:HN1B04FE-GR(5L,F,T
HN1B04FE-GR(5LFTTR
HN1B04FE-GR(5LFTTR-ND
HN1B04FE-GR,LF(B
HN1B04FE-GR,LF(T
HN1B04FE-GRLF(TTR
HN1B04FE-GRLF(TTR-ND
HN1B04FE-GRLFTR
HN1B04FEGRLFTR
HN1B04FEGRLFTR-ND
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:16 Weeks
Manufacturer Part Number:HN1B04FE-GR,LF
Frequency - Transition:80MHz
Expanded Description:Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 80MHz 100mW Surface Mount ES6
Description:TRANS NPN/PNP 50V 0.15A ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 6V
Current - Collector Cutoff (Max):100nA (ICBO)
Current - Collector (Ic) (Max):150mA
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments