HGT1S10N120BNST
HGT1S10N120BNST
Part Number:
HGT1S10N120BNST
Manufacturer:
Fairchild/ON Semiconductor
Description:
IGBT 1200V 35A 298W TO263AB
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
15141 Pieces
Data sheet:
HGT1S10N120BNST.pdf

Introduction

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Specifications

Voltage - Collector Emitter Breakdown (Max):1200V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:960V, 10A, 10 Ohm, 15V
Td (on/off) @ 25°C:23ns/165ns
Switching Energy:320µJ (on), 800µJ (off)
Supplier Device Package:TO-263AB
Series:-
Power - Max:298W
Packaging:Original-Reel®
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names:HGT1S10N120BNSTDKR
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:11 Weeks
Manufacturer Part Number:HGT1S10N120BNST
Input Type:Standard
IGBT Type:NPT
Gate Charge:100nC
Expanded Description:IGBT NPT 1200V 35A 298W Surface Mount TO-263AB
Description:IGBT 1200V 35A 298W TO263AB
Current - Collector Pulsed (Icm):80A
Current - Collector (Ic) (Max):35A
Email:[email protected]

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