GT10J312(Q)
Part Number:
GT10J312(Q)
Manufacturer:
Toshiba Semiconductor
Description:
IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
19834 Pieces
Data sheet:
GT10J312(Q).pdf

Introduction

BYCHIPS is the stocking distributor for GT10J312(Q), we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for GT10J312(Q) by email, we will give you a best price according your plan.
Buy GT10J312(Q) with BYCHPS
Buy with guarantee

Specifications

Voltage - Collector Emitter Breakdown (Max):600V
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Test Condition:300V, 10A, 100 Ohm, 15V
Td (on/off) @ 25°C:400ns/400ns
Switching Energy:-
Supplier Device Package:TO-220SM
Series:-
Reverse Recovery Time (trr):200ns
Power - Max:60W
Packaging:Tube
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Part Number:GT10J312(Q)
Input Type:Standard
IGBT Type:-
Expanded Description:IGBT 600V 10A 60W Surface Mount TO-220SM
Description:IGBT 600V 10A 60W TO220SM
Current - Collector Pulsed (Icm):20A
Current - Collector (Ic) (Max):10A
Email:[email protected]

Quick Request Quote

Part Number
Quantity
Company
E-mail
Phone
Comments