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FQB6N80TM
- Part Number:
- FQB6N80TM
- Manufacturer:
- Fairchild/ON Semiconductor
- Description:
- MOSFET N-CH 800V 5.8A D2PAK
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 16742 Pieces
- Data sheet:
- FQB6N80TM.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | D²PAK (TO-263AB) |
| Series: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.95 Ohm @ 2.9A, 10V |
| Power Dissipation (Max): | 3.13W (Ta), 158W (Tc) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | FQB6N80TM-ND FQB6N80TMTR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 9 Weeks |
| Manufacturer Part Number: | FQB6N80TM |
| Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 800V 5.8A (Tc) 3.13W (Ta), 158W (Tc) Surface Mount D²PAK (TO-263AB) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Drain to Source Voltage (Vdss): | 800V |
| Description: | MOSFET N-CH 800V 5.8A D2PAK |
| Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
| Email: | [email protected] |
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