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C3M0065100J
- Part Number:
- C3M0065100J
- Manufacturer:
- Cree
- Description:
- 1000V, 65 MOHM, G3 SIC MOSFET
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 13109 Pieces
- Data sheet:
- C3M0065100J.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 5mA |
|---|---|
| Vgs (Max): | +15V, -4V |
| Technology: | SiC (Silicon Carbide Junction Transistor) |
| Supplier Device Package: | D2PAK-7 |
| Series: | C3M™ |
| Rds On (Max) @ Id, Vgs: | 78 mOhm @ 20A, 15V |
| Power Dissipation (Max): | 113.5W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | C3M0065100J |
| Input Capacitance (Ciss) (Max) @ Vds: | 660pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 15V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 1000V (1kV) 35A (Tc) 113.5W (Tc) Surface Mount D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On): | 15V |
| Drain to Source Voltage (Vdss): | 1000V (1kV) |
| Description: | 1000V, 65 MOHM, G3 SIC MOSFET |
| Current - Continuous Drain (Id) @ 25°C: | 35A (Tc) |
| Email: | [email protected] |
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