BYCHIPS is the stocking distributor for BSS670S2L H6327, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for BSS670S2L H6327 by email, we will give you a best price according your plan.
Buy BSS670S2L H6327 with BYCHPS
Buy with guarantee
BSS670S2L H6327
- Part Number:
- BSS670S2L H6327
- Manufacturer:
- International Rectifier (Infineon Technologies)
- Description:
- MOSFET N-CH 55V 540MA SOT23
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 15892 Pieces
- Data sheet:
- BSS670S2L H6327.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 2V @ 2.7µA |
|---|---|
| Vgs (Max): | ±20V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | PG-SOT23-3 |
| Series: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 270mA, 10V |
| Power Dissipation (Max): | 360mW (Ta) |
| Packaging: | Original-Reel® |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Other Names: | BSS670S2L H6327DKR |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 10 Weeks |
| Manufacturer Part Number: | BSS670S2L H6327 |
| Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.26nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 55V 540mA (Ta) 360mW (Ta) Surface Mount PG-SOT23-3 |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Drain to Source Voltage (Vdss): | 55V |
| Description: | MOSFET N-CH 55V 540MA SOT23 |
| Current - Continuous Drain (Id) @ 25°C: | 540mA (Ta) |
| Email: | [email protected] |
Related parts for BSS670S2L H6327
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
BSS670S2LL6327HTSA1 | Infineon Technologies | MOSFET N-CH 55V 540MA SOT-23 | Inquiry |
|
BSS670S2L | Infineon Technologies | MOSFET N-CH 55V 540MA SOT-23 | Inquiry |
 |
2SK2544(F) | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO-220AB | Inquiry |
|
BSS670S2LH6433XTMA1 | Infineon Technologies | MOSFET N-CH 55V 540MA SOT23 | Inquiry |
 |
NVD5C688NLT4G | ON Semiconductor | T6 60V LL DPAK | Inquiry |
 |
HUFA76443S3ST | Fairchild/ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | Inquiry |
 |
IPB03N03LB G | Infineon Technologies | MOSFET N-CH 30V 80A TO-263 | Inquiry |
 |
TK10V60W,LVQ | Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A 5DFN | Inquiry |
 |
PH6530AL,115 | NXP USA Inc. | MOSFET N-CH 30V LFPAK | Inquiry |
 |
PHW80NQ10T,127 | NXP USA Inc. | MOSFET N-CH 100V 80A SOT429 | Inquiry |
 |
SI5432DC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 20V 6A 1206-8 | Inquiry |
Latest News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers