APTM120DA30CT1G
APTM120DA30CT1G
Part Number:
APTM120DA30CT1G
Manufacturer:
Microsemi
Description:
MOSFET N-CH 1200V 31A SP1
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
13376 Pieces
Data sheet:
APTM120DA30CT1G.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:5V @ 2.5mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP1
Series:POWER MOS 8™
Rds On (Max) @ Id, Vgs:360 mOhm @ 25A, 10V
Power Dissipation (Max):657W (Tc)
Packaging:Bulk
Package / Case:SP1
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:22 Weeks
Manufacturer Part Number:APTM120DA30CT1G
Input Capacitance (Ciss) (Max) @ Vds:14560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:560nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 1200V (1.2kV) 31A 657W (Tc) Chassis Mount SP1
Drain to Source Voltage (Vdss):1200V (1.2kV)
Description:MOSFET N-CH 1200V 31A SP1
Current - Continuous Drain (Id) @ 25°C:31A
Email:[email protected]

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