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2SK1119(F)
- Part Number:
- 2SK1119(F)
- Manufacturer:
- Toshiba Semiconductor
- Description:
- MOSFET N-CH 1000V 4A TO-220AB
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12200 Pieces
- Data sheet:
- 1.2SK1119(F).pdf2.2SK1119(F).pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 1mA |
|---|---|
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | TO-220AB |
| Series: | - |
| Rds On (Max) @ Id, Vgs: | 3.8 Ohm @ 2A, 10V |
| Power Dissipation (Max): | 100W (Tc) |
| Packaging: | Tube |
| Package / Case: | TO-220-3 |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | 2SK1119(F) |
| Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
| FET Type: | N-Channel |
| FET Feature: | - |
| Expanded Description: | N-Channel 1000V (1kV) 4A (Ta) 100W (Tc) Through Hole TO-220AB |
| Drain to Source Voltage (Vdss): | 1000V (1kV) |
| Description: | MOSFET N-CH 1000V 4A TO-220AB |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
| Email: | [email protected] |
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