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2SA1930(Q,M)
- Part Number:
- 2SA1930(Q,M)
- Manufacturer:
- Toshiba Semiconductor
- Description:
- TRANS PNP 180V 2A TO220NIS
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 14873 Pieces
- Data sheet:
- 2SA1930(Q,M).pdf
Introduction
Specifications
| Voltage - Collector Emitter Breakdown (Max): | 180V |
|---|---|
| Vce Saturation (Max) @ Ib, Ic: | 1V @ 100mA, 1A |
| Transistor Type: | PNP |
| Supplier Device Package: | TO-220NIS |
| Series: | - |
| Power - Max: | 2W |
| Packaging: | Bulk |
| Package / Case: | TO-220-3 Full Pack |
| Other Names: | 2SA1930(Q,M)-ND 2SA1930QM |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | 2SA1930(Q,M) |
| Frequency - Transition: | 200MHz |
| Expanded Description: | Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS |
| Description: | TRANS PNP 180V 2A TO220NIS |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 100mA, 5V |
| Current - Collector Cutoff (Max): | 5µA (ICBO) |
| Current - Collector (Ic) (Max): | 2A |
| Email: | [email protected] |
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