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10ETF12S
- Part Number:
- 10ETF12S
- Manufacturer:
- Vishay / Semiconductor - Diodes Division
- Description:
- DIODE GEN PURP 1.2KV 10A D2PAK
- Lead Free Status / RoHS Status:
- Contains lead / RoHS non-compliant
- Available Quantity:
- 18686 Pieces
- Data sheet:
- 10ETF12S.pdf
Introduction
Specifications
| Voltage - Forward (Vf) (Max) @ If: | 1.33V @ 10A |
|---|---|
| Voltage - DC Reverse (Vr) (Max): | 1200V (1.2kV) |
| Supplier Device Package: | TO-263AB (D²PAK) |
| Speed: | Fast Recovery = 200mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 310ns |
| Packaging: | Tube |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Other Names: | *10ETF12S VS-10ETF12S VS-10ETF12S-ND VS10ETF12S VS10ETF12S-ND |
| Operating Temperature - Junction: | -40°C ~ 150°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Part Number: | 10ETF12S |
| Expanded Description: | Diode Standard 1200V (1.2kV) 10A Surface Mount TO-263AB (D²PAK) |
| Diode Type: | Standard |
| Description: | DIODE GEN PURP 1.2KV 10A D2PAK |
| Current - Reverse Leakage @ Vr: | 100µA @ 1200V |
| Current - Average Rectified (Io): | 10A |
| Capacitance @ Vr, F: | - |
| Email: | [email protected] |
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