STI11NM80
STI11NM80
Part Number:
STI11NM80
Manufacturer:
ST
Description:
MOSFET N-CH 800V 11A I2PAK-3
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
15913 Pieces
Data sheet:
STI11NM80.pdf

Introduction

BYCHIPS is the stocking distributor for STI11NM80, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for STI11NM80 by email, we will give you a best price according your plan.
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Specifications

Vgs(th) (Max) @ Id:5V @ 250µA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:MDmesh™
Rds On (Max) @ Id, Vgs:400 mOhm @ 5.5A, 10V
Power Dissipation (Max):150W (Tc)
Packaging:Tube
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Other Names:497-13106-5
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:18 Weeks
Manufacturer Part Number:STI11NM80
Input Capacitance (Ciss) (Max) @ Vds:1630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:43.6nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 800V 11A (Tc) 150W (Tc) Through Hole I2PAK (TO-262)
Drain to Source Voltage (Vdss):800V
Description:MOSFET N-CH 800V 11A I2PAK-3
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Email:[email protected]

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