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CSD25213W10
- Part Number:
- CSD25213W10
- Manufacturer:
- Description:
- MOSFET P-CH 20V 1.6A 4DSBGA
- Lead Free Status / RoHS Status:
- Lead free / RoHS Compliant
- Available Quantity:
- 12075 Pieces
- Data sheet:
- CSD25213W10.pdf
Introduction
Specifications
| Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
|---|---|
| Vgs (Max): | -6V |
| Technology: | MOSFET (Metal Oxide) |
| Supplier Device Package: | 4-DSBGA (1x1) |
| Series: | NexFET™ |
| Rds On (Max) @ Id, Vgs: | 47 mOhm @ 1A, 4.5V |
| Power Dissipation (Max): | 1W (Ta) |
| Packaging: | Tape & Reel (TR) |
| Package / Case: | 4-UFBGA, DSBGA |
| Other Names: | 296-40004-2 CSD25213W10-ND |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 6 Weeks |
| Manufacturer Part Number: | CSD25213W10 |
| Input Capacitance (Ciss) (Max) @ Vds: | 478pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 4.5V |
| FET Type: | P-Channel |
| FET Feature: | - |
| Expanded Description: | P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss): | 20V |
| Description: | MOSFET P-CH 20V 1.6A 4DSBGA |
| Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
| Email: | [email protected] |
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