APT29F100B2
APT29F100B2
Part Number:
APT29F100B2
Manufacturer:
Microsemi
Description:
MOSFET N-CH 1000V 30A T-MAX
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
12075 Pieces
Data sheet:
APT29F100B2.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:5V @ 2.5mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:T-MAX™ [B2]
Series:POWER MOS 8™
Rds On (Max) @ Id, Vgs:440 mOhm @ 16A, 10V
Power Dissipation (Max):1040W (Tc)
Packaging:Tube
Package / Case:TO-247-3 Variant
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:22 Weeks
Manufacturer Part Number:APT29F100B2
Input Capacitance (Ciss) (Max) @ Vds:8500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:260nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 1000V (1kV) 30A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):1000V (1kV)
Description:MOSFET N-CH 1000V 30A T-MAX
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Email:[email protected]

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