1N5554US
1N5554US
Part Number:
1N5554US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 1KV 3A B-MELF
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
17757 Pieces
Data sheet:
1N5554US.pdf

Introduction

BYCHIPS is the stocking distributor for 1N5554US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N5554US by email, we will give you a best price according your plan.
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Specifications

Voltage - Forward (Vf) (Max) @ If:1.2V @ 9A
Voltage - DC Reverse (Vr) (Max):1000V (1kV)
Supplier Device Package:B, SQ-MELF
Speed:Standard Recovery >500ns, > 200mA (Io)
Series:-
Reverse Recovery Time (trr):2µs
Packaging:Bulk
Package / Case:SQ-MELF, B
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:7 Weeks
Manufacturer Part Number:1N5554US
Expanded Description:Diode Standard 1000V (1kV) 3A Surface Mount B, SQ-MELF
Diode Type:Standard
Description:DIODE GEN PURP 1KV 3A B-MELF
Current - Reverse Leakage @ Vr:1µA @ 1000V
Current - Average Rectified (Io):3A
Capacitance @ Vr, F:-
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