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1N5553US
- Part Number:
- 1N5553US
- Manufacturer:
- Microsemi
- Description:
- DIODE GEN PURP 800V 3A B-MELF
- Lead Free Status / RoHS Status:
- Contains lead / RoHS non-compliant
- Available Quantity:
- 14179 Pieces
- Data sheet:
- 1N5553US.pdf
Introduction
Specifications
| Voltage - Forward (Vf) (Max) @ If: | 1.2V @ 9A |
|---|---|
| Voltage - DC Reverse (Vr) (Max): | 800V |
| Supplier Device Package: | B, SQ-MELF |
| Speed: | Standard Recovery >500ns, > 200mA (Io) |
| Series: | - |
| Reverse Recovery Time (trr): | 2µs |
| Packaging: | Bulk |
| Package / Case: | SQ-MELF, B |
| Operating Temperature - Junction: | -65°C ~ 175°C |
| Mounting Type: | Surface Mount |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Manufacturer Standard Lead Time: | 7 Weeks |
| Manufacturer Part Number: | 1N5553US |
| Expanded Description: | Diode Standard 800V 3A Surface Mount B, SQ-MELF |
| Diode Type: | Standard |
| Description: | DIODE GEN PURP 800V 3A B-MELF |
| Current - Reverse Leakage @ Vr: | 1µA @ 800V |
| Current - Average Rectified (Io): | 3A |
| Capacitance @ Vr, F: | - |
| Email: | [email protected] |
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